Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps
A field-emission-induced electromigration method (activation) is reported for integrating single-electron transistors operating at T = 298 K.The field emission Hand Mixer currents between the two opposite electrodes of each series-connected nanogap are tuned to accumulate Ni atoms within the gaps.For ten series-connected nanogaps, the resistance (V